Microfabricated, High Power Millimeter Wave Amplifiers at G-band

被引：0
|
作者：
Joye, Colin D. [1 ]
Cook, Alan M. [1 ]
Calame, Jeffrey P. [1 ]
Abe, David K. [1 ]
Nguyen, Khanh T. [2 ]
Vlasov, Alexander N. [1 ]
Chernyavskiy, Igor A. [1 ]
Wright, Edward L. [2 ]
Pershing, Dean E. [2 ]
Levush, Baruch [3 ]
机构：
[1] US Naval Res Lab, Code 6850, Washington, DC 20375 USA
[2] Beam Wave Res Inc, Bethesda, MD 20814 USA
[3] US Naval Res Lab, Washington, DC 20375 USA
来源：
2014 39TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2014年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the demonstration of the first traveling wave tube circuit fabricated using ultraviolet photolithography. The complete amplifier demonstrated over 60 W output power at 214.5 GHz with 15 GHz bandwidth in the small signal regime at 14 dB gain. A high-gain 233 GHz amplifier is now under development and predicted to reach over 100 W output power. We present several microfabrication advancements that will be utilized to create the new device.
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页数：2
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