Non-quasi-static small signal model of four-terminal MOS transistors

被引：0
|
作者：
Nitsu, Y [1 ]
机构：
[1] Toshiba Corp, Syst LSI Dev Ctr, Adv Microelect Ctr, Yokohama, Kanagawa 2358522, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2000年 / E83C卷 / 12期
关键词：
non-quasi-static small signal model; MOS; SPICE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Precise simulation of non-quasi-static (NQS) characteristics is crucial for the analog application of MOS transistors. This paper presents the small signal admittance model of four-terminal NQS MOS transistors by solving the differential equation derived from the primary principle. The model contains the bulk-charge effect, the mobility reduction, and the velocity saturation. The results are compared with those for the conventional quasi-static model, the BSIM3v3 NQS model, and the 2-D device simulation.
引用
收藏
页码：1950 / 1960
页数：11
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