Unipolar TaOx-Based Resistive Change Memory Realized With Electrode Engineering

被引：59
|
作者：
Zhang, Lijie [1 ]
Huang, Ru [1 ]
Zhu, Minghao [1 ]
Qin, Shiqiang [1 ]
Kuang, Yongbian [1 ]
Gao, Dejin [1 ]
Shi, Congyin [1 ]
Wang, Yangyuan [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 09期
基金：
中国国家自然科学基金;
关键词：
Gibbs free energy; RRAM; TaOx; unipolar;
D O I：
10.1109/LED.2010.2052091
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, a reproducible unipolar resistive change memory (RRAM) based on TaOx was successfully fabricated through electrode design. The fabricated unipolar RRAM exhibits lower switching voltages, fast switching speed of less than 80 ns, excellent retention capabilities, and stable cycling behaviors. Moreover, the role of top-electrode material on the resistive switching mode polarity of TaOx-based RRAM was verified by comparative experiments. Analysis about the electrode effect on the resistive switching mode polarity of TaOx-based RRAM with the theory of Gibbs free energy may provide some guidelines for the design of unipolar metal-oxide-based RRAM.
引用
收藏
页码：966 / 968
页数：3
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