Effective Work Function Modulation by Aluminum Ion Implantation on Hf-Based High-k/Metal Gate pMOSFET

被引：17

作者：

Chen, Y. W. ^{[1
,2
]}

Lai, C. M. ^{[1
]}

Chiang, T. F. ^{[1
]}

Cheng, L. W. ^{[1
]}

Yu, C. H. ^{[1
]}

Chou, C. H. ^{[1
]}

Hsu, C. H. ^{[1
]}

Chang, W. Y. ^{[2
]}

Wu, T. B. ^{[2
]}

Lin, C. T. ^{[1
]}

机构：

[1] United Microelect Corp, ATD Exploratory Technol Div, Tainan 30077, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 11期

关键词：

Al Implant; effective work function (EWF); HfO2;

D O I：

10.1109/LED.2010.2066952

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of aluminum (Al) implantation into TiN/HfO2/SiO2 on the effective work function is investigated. Al implanted through poly-Si cannot attain sufficient flatband voltage (V-FB) shift unless at higher implantation energy. Al implanted through TiN at 1.2 keV with a dose of 5 x 10(15) cm(-2) raised the V-FB to about 250 mV compared with a nonimplanted gate stack. Moreover, the V-FB shift can be up to about 800 mV at 2 keV with the same dose level accompanied with slightly equivalent oxide thickness penalty and gate leakage current degradation. Optimized process window to control Al diffusion depth was essential to minimize these impacts.

引用

页码：1290 / 1292

页数：3

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