Pt-functionalized Graphene/Si Heterostructure for Hydrogen Sensing

被引：0
|
作者：
Uddin, Md. Ahsan [1 ]
Singh, Amol [1 ]
Sudarshan, Tangali [1 ]
Koley, Goutam [1 ]
机构：
[1] Univ South Carolina, Dept Elect Engn, Columbia, SC 29208 USA
来源：
2013 IEEE SENSORS | 2013年
关键词：
SUSPENDED GRAPHENE; SENSORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, H-2 sensing by graphene/Si Schottky diode with Pt functionalization has been demonstrated. Both p-and n-Si/graphene Schottky devices showed conductivity change in presence of H-2 molecules in ambient conditions at room temperature. Successful detection of 10 ppm H-2 in air has been demonstrated. Performance enhancement compared to the Pt-functionalized just graphene based sensor is validated by the response obtained from both device types fabricated on the same chip. Seven fold increase in sensitivity in H-2 sensing has been obtained for graphene/Si devices compared to the simple graphene sensor in ambient condition.
引用
收藏
页码：1279 / 1282
页数：4
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