The PCM way for embedded Non Volatile Memories applications

被引：0
|
作者：
Zuliani, P. [1 ]
Conte, A. [2 ]
Cappelletti, P. [1 ]
机构：
[1] STMicroelectronics, Agrate Brianza, Italy
[2] STMicroelectronics, Catania, Italy
来源：
2019 SYMPOSIUM ON VLSI TECHNOLOGY | 2019年
关键词：
PCM; embedded NVM and automotive applications;
D O I：
10.23919/VLSIT.2019.8776502
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A comparative analysis of different Resistive Memories proposed as Non Volatile Memories for embedded applications is here presented. Based on today scenario of industry-standard Floating Gate solutions, key factors as performances, reliability and technology maturity are considered when facing more innovative memory cells. In particular the race seems to be open at 28nm, where different players are proposing different memories integrated in the Back End Of the Line. Original results obtained on multi-megabits array integrating Phase Change Memories are here discussed covering cell scalability, High Temperature data retention and extended endurance capability, all in line with eNVM application requirements.
引用
收藏
页码：T192 / T193
页数：2
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