Coherent population trapping of electron spins in a high-purity n-type GaAs semiconductor -: art. no. 187405

被引：69

作者：

Fu, KMC ^{[1
]}

Santori, C

Stanley, C

Holland, MC

Yamamoto, Y

机构：

[1] Stanford Univ, Quantum Entanglement Project, ICORP, JST,Edward L Ginzton Lab, Stanford, CA 94305 USA

[2] Hewlett Packard Labs, Palo Alto, CA 94304 USA

[3] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

[4] Natl Inst Informat, Tokyo, Japan

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 95卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.95.187405

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In high-purity n-type GaAs under a strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor-bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence, indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trapping in GaAs indicates that this and similar semiconductor systems could be used for various electromagnetically induced transparency type experiments.

引用

页数：4

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