Temperature Sensor Using Thin-Film Transistor

被引：29

作者：

Nakashima, Akihiro ^{[1
]}

Sagawa, Yuki ^{[2
]}

Kimura, Mutsumi ^{[1
,3
]}

机构：

[1] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan

[2] Nara Inst Sci & Technol, Grad Sch Mat Sci, Takayama, Ikoma 6300192, Japan

[3] Ryukoku Univ, Innovat Mat & Proc Res Ctr, Otsu, Shiga 5202194, Japan

来源：

IEEE SENSORS JOURNAL | 2011年 / 11卷 / 04期

关键词：

Driving method; off current; temperature sensor; thin-film transistors (TFTs); POLY-SI TFTS; LASER CRYSTALLIZATION; N-CHANNEL; DEPENDENCE; DISPLAY;

D O I：

10.1109/JSEN.2010.2060720

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a temperature sensor using a thin-film transistor (TFT). First, we measure temperature dependence of a transistor characteristic and determine that it is suitable to employ off current. Next, we suggest a cell circuit consisting of one transistor and one capacitor and a driving method composed of initializing, holding, and detecting periods. Finally, we find that it is possible to detect temperature using this sensing scheme, for example, from the room temperature to 70 degrees C. We think that it is promising to integrate this temperature sensor in some applications using TFTs.

引用

页码：995 / 998

页数：4

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