Graded Etched Junction Termination for SiC Thyristors

被引：8
|
作者：
Paques, Gontran [1 ]
Dheilly, Nicolas [3 ]
Planson, Dominique [3 ]
De Doncker, Rik W.
Scharnholz, Sigo [1 ,2 ]
机构：
[1] French German Res Inst St Louis ISL, 5 Rue Gen Cassagnou, F-68300 St Louis, France
[2] Univ Aachen, Aachen, Germany
[3] Ampere Lab, Villeurbanne, France
来源：
SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷
关键词：
Silicon carbide; GTO; thyristor; etched termination; JTE;
D O I：
10.4028/www.scientific.net/MSF.679-680.457
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we propose a graded etched junction termination extension for SiC thyristors. It has the functionality of a multiple implanted JTE, but is realized by purely etched means. This termination is demonstrated up to 4 kV on a sample with a drift layer thickness of 35 mu m. On another sample with a thinner drift layer, similar thyristors have been realized with a low resistive contact, resulting in an on-state voltage drop of 3.2 V at 40 A/cm(2).
引用
收藏
页码：457 / +
页数：2
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