Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition (vol 109, 081907, 2016)

被引：0
|
作者：
Enriquez, Erik [1 ]
Zhang, Yingying [2 ]
Chen, Aiping [1 ]
Bi, Zhenxing [1 ]
Wang, Yongqiang [1 ]
Fu, Engang [1 ]
Harrell, Zachary [3 ]
Lu, Xujie [1 ]
Dowden, Paul [1 ]
Wang, Haiyan [4 ]
Chen, Chonglin [3 ]
Jia, Quanxi [1 ]
机构：
[1] Los Alamos Natl Lab, Ctr Integrated Nanotechnol CINT, Los Alamos, NM 87545 USA
[2] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
[3] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA
[4] Texas A&M Univ, Dept Mat Sci & Engn, College Stn, TX 77843 USA
来源：
APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 19期
关键词：
D O I：
10.1063/1.4967441
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页数：1
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