Thin-film persistent current switch

被引：3
|
作者：
Balchandani, P [1 ]
Torii, RH
Shile, R
机构：
[1] Stanford Univ, Lucas Ctr, Stanford, CA 94305 USA
[2] Stanford Univ, STEP 250, Stanford, CA 94305 USA
[3] Stanford Univ, Grav Probe B Program, Stanford, CA 94305 USA
来源：
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2005年 / 15卷 / 03期
基金：
美国国家航空航天局;
关键词：
current injection; current switch; heat switch; thin film;
D O I：
10.1109/TASC.2005.847491
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed a fast, low power heat switch for switching a niobium thin film between the normal and superconducting state. The sputtered niobium film (400 nm thick, 100 mu m wide) has a critical current density of 5 x 10(10) Am-2. Switching is produced by joule heating a small section of the niobium film with a titanium thin-film resistor. With the heat switch in vacuum, the minimum heater power needed to switch to the normal state was 4.5 x 10(-5) W. A simple three-dimensional thermal model shows that the minimum power is primarily determined by the thermal conductivity of the substrate. We have achieved response times less than 10(-6) s.
引用
收藏
页码：3821 / 3826
页数：6
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