Indium doped zinc oxide thin films deposited by ultrasonic spray pyrolysis technique: Effect of the substrate temperature on the physical properties

被引:35
|
作者
Castaneda, L. [1 ]
Maldonado, A. [2 ]
Escobedo-Morales, A. [3 ]
Avendano-Alejo, M. [4 ]
Gomez, H. [5 ]
Vega-Perez, J. [6 ]
Olvera, M. de la L. [2 ]
机构
[1] Benemerita Univ Autonoma Puebla, Inst Fis, Puebla 72570, Mexico
[2] SEES, Dept Ingn Elect, Ctr Invest Estudios Avanzados, Inst Politecn Nacl CINVESTAV IPN, Mexico City 07000, DF, Mexico
[3] Benemerita Univ Autonoma Puebla, Fac Ingn Quim, Puebla 72570, Mexico
[4] Univ Nacl Autonoma Mexico, Ctr Ciencias Aplicadas & Desarrollo Tecnol, Mexico City 04510, DF, Mexico
[5] UAEH, CITIS, Pachuca, Hidalgo, Mexico
[6] Inst Politecn Nacl, Escuela Super Ingn Mecan & Elect U Ticoman, Mexico City 07340, DF, Mexico
关键词
Zinc oxide; Thin solid films; Ultrasonic spray pyrolysis; ZNO FILMS; OPTICAL-PROPERTIES; TRANSPARENT CONDUCTORS; TRANSISTORS; EMISSION; PHOTOLUMINESCENCE; EXCITATION; TRANSPORT; ORANGE;
D O I
10.1016/j.mssp.2011.01.013
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Indium doped zinc oxide (ZnO:In) thin solid films were deposited on soda-lime glass substrates by the ultrasonic spray pyrolysis technique. The effect of the substrate temperature on the electrical, morphology, and optical characteristics of ZnO:In thin films was studied. It was found that, as the substrate temperature increases, the electrical resistivity decreases, reaching a minimum value in the order of 7.3 x 10(-3) Omega cm, at 415 degrees C. Further increase in the substrate temperature results on an increment on the electrical resistivity of the thin solid films. All the samples were polycrystalline with a well-defined wurtzite structure. The preferred growth shows a switching from a random orientation at low substrates temperatures to (0 0 2) in the case of films deposited at the highest substrate temperature used. As the substrate temperature increases, the corresponding surface morphology changes from an almost faceted pyramidal to round-shaped form. The optical transmittance of the films in a interval of 400 to 700 nm is around 70%, with a band gap value in the order of 3.45 eV. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:114 / 119
页数:6
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