Synchrotron radiation photoabsorption and photoemission spectroscopy for thermal-induced reoriented Si polymer

被引:5
|
作者
Nath, KG [1 ]
Shimoyama, I [1 ]
Sekiguchi, T [1 ]
Baba, Y [1 ]
机构
[1] JAERI, Synchrotron Radiat Res Ctr, Tokai, Ibaraki 3191195, Japan
关键词
poly(dimethylsilane); X-ray photoemission spectroscopy; near-edge X-ray absorption fine structure; synchrotron radiation; oriented film; laser annealing;
D O I
10.1016/j.elspec.2005.01.185
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
The effect of laser annealing on electronic structures and molecular orientation for poly(dimethylsilane) {PDMS, [Si(CH3)(2)](n)} has been studied by synchrotron radiation photoemission and photoabsorption spectroscopy. Prior to annealing, PDMS powder was mounted on the basal plane of highly oriented pyrolytic graphite. Both Si 1s X-ray photoemission spectroscopy and near-edge X-ray absorption fine structure spectroscopy (NEXAFS) at Si 1s edge show that electronic structures have been modified due to annealing. Furthermore, the angle-dependent NEXAFS spectra clearly indicate that the annealed products maintain a specific orientation. Interestingly, no such kind of orientation is present in as-received PDMS powder as no angle-dependency is observed before annealing. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:323 / 326
页数:4
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