Non-radiative energy transfer from Er3+ ions to the electronic states of the chalcogenide glass matrix

被引:10
|
作者
Ivanova, TY [1 ]
Man'shina, AA [1 ]
Kurochkin, AV [1 ]
Tver'yanovich, TS [1 ]
Smirnov, VB [1 ]
机构
[1] St Petersburg State Univ, Russian Ctr Laser Phys, St Petersburg 198504, Russia
关键词
D O I
10.1016/S0022-3093(03)00422-8
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Lifetime spectroscopy of the chalcogenide systems Ga-Ge-S:Er3+ and Ga-Ge-S-Se:Er3+ has shown that the nonradiative energy transfer from rare-earth ions to the electronic states of the chalcogenide matrix is important. Numerical calculations of transition probabilities (W-R, W-mph, W-CR) allowed estimation of the probability of the energy transfer to the chalcogenide matrix. It was found that when the optical bandgap of the matrix approaches the Er3+ level, the probability of such energy transfer process will increase as long as a complete resonance is not achieved. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:320 / 324
页数:5
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