Variation of light emitting properties of ZnO thin films depending on post-annealing temperature

被引：120
|
作者：
Kang, HS [1 ]
Kang, JS [1 ]
Pang, SS [1 ]
Shim, ES [1 ]
Lee, SY [1 ]
机构：
[1] Yonsei Univ, Dept Elect & Elect Engn, Seodaemoon Ku, Seoul 120749, South Korea
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 102卷 / 1-3期
关键词：
ZnO; pulsed laser deposition; post-annealing treatment; photoluminescence;
D O I：
10.1016/S0921-5107(02)00730-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition (PLD). In order to investigate the effect of post-annealing treatment on the optical property of ZnO thin films, films have been annealed in oxygen at various annealing temperatures after deposition. After post-annealing treatment in the oxygen ambient, the optical properties of ZnO thin films were characterized by photoluminescence (PL). The structural properties of ZnO thin films were characterized by XRD. Crystallinity of ZnO film is enhanced at annealing temperature above 700 degreesC. As the post-annealing temperature increases, intensity of UV (380 nm) peak is decreased while the intensity of visible (about 490-530 nm) peak is increased, carrier concentration is decreased and resistivity was increased. Structural, electrical and optical properties of ZnO films have been investigated for the application of light emission device. (C) 2003 Published by Elsevier B.V.
引用
收藏
页码：313 / 316
页数：4
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