Energy efficient and fast reversal of a fixed skyrmion two-terminal memory with spin current assisted by voltage controlled magnetic anisotropy

被引:10
|
作者
Bhattacharya, Dhritiman [1 ]
Al-Rashid, Md Mamun [1 ,2 ]
Atulasimha, Jayasimha [1 ,2 ]
机构
[1] Virginia Commonwealth Univ, Dept Mech & Nucl Engn, Richmond, VA 23284 USA
[2] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23284 USA
基金
美国国家科学基金会;
关键词
skyrmions; voltage control of magnetic anisotropy; spin transfer torque; two-terminal memory; energy effecient; reversal; CURRENT-DRIVEN DYNAMICS; WEAK FERROMAGNETISM; FIELD;
D O I
10.1088/1361-6528/aa811d
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Recent work (P-H Jang et al 2015 Appl. Phys. Lett. 107 202401, J. Sampaio et al 2016 Appl. Phys. Lett. 108 112403) suggests that ferromagnetic reversal with spin transfer torque (STT) requires more current in a system in the presence of Dzyaloshinskii-Moriya interaction (DMI) than switching a typical ferromagnet of the same dimensions and perpendicular magnetic anisotropy (PMA). However, DMI promotes the stabilization of skyrmions and we report that when perpendicular anisotropy is modulated (reduced) for both the skyrmion and ferromagnet, it takes a much smaller current to reverse the fixed skyrmion than to reverse the ferromagnet in the same amount of time, or the skyrmion reverses much faster than the ferromagnet at similar levels of current. We show with rigorous micromagnetic simulations that skyrmion switching proceeds along a different path at very low PMA, which results in a significant reduction in the spin current or time required for reversal. This can offer potential for memory applications where a relatively simple modification of the standard STT-RAM (to include a heavy metal adjacent to the soft magnetic layer and with appropriate design of the tunnel barrier) can lead to an energy efficient and fast magnetic memory device based on the reversal of fixed skyrmions.
引用
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页数:7
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