Origin of preferential grain orientation in excimer laser-induced crystallization of silicon thin films

The origin of the formation of {100} and {111} grain textures in polycrystalline silicon thin films prepared with multiple excimer laser shots at the super-lateral-growth crystallization regime is investigated in this study. Our results demonstrate that the type of texture formed is determined solely by the thickness of the silicon layer. At a critical value of 40 nm, a transition from {100} to {111} texture is observed with increasing layer thickness. It is therefore proposed that below this critical value, the texture formation is governed by surface energy anisotropy whereas above it, the kinetics of the solidification process predominate. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704559]