Novel collector design for high-speed SiGe:C HBTs

被引：0

作者：

Heinemann, B ^{[1
]}

Rücker, H ^{[1
]}

Barth, R ^{[1
]}

Bauer, J ^{[1
]}

Bolze, D ^{[1
]}

Bugiel, E ^{[1
]}

Drews, J ^{[1
]}

Ehwald, KE ^{[1
]}

Grabolla, T ^{[1
]}

Haak, U ^{[1
]}

Höppner, W ^{[1
]}

Knoll, D ^{[1
]}

Krüger, D ^{[1
]}

Kuck, B ^{[1
]}

Kurps, R ^{[1
]}

Marschmeyer, M ^{[1
]}

Richter, HH ^{[1
]}

Schley, P ^{[1
]}

Schmidt, D ^{[1
]}

Scholz, R ^{[1
]}

Tillack, B ^{[1
]}

Winkler, W ^{[1
]}

Wolansky, D ^{[1
]}

Wulf, HE ^{[1
]}

Yamamoto, Y ^{[1
]}

Zaumseil, P ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Oder, Germany

来源：

INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST | 2002年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We describe a novel collector design for high-frequency SiGe:C HBTs without deep trenches and with low-resistance collectors formed by high-dose ion implantation after shallow trench formation. f(T) values of 200GHz at BVCEO = 2.0V and ring, oscillator delays of 4.3 ps are obtained. Excellent static ring characteristics and high yield were achieved for the HBT module ule integrated in a 0.25 mum CMOS platform.

引用

页码：775 / 778

页数：4

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