Voltage-induced recovery of dielectric breakdown (high current resistance switching) in HfO2

被引：14
|
作者：
El Kamel, F. [1 ]
Gonon, P. [2 ]
Vallee, C. [2 ]
Jousseaume, V. [3 ]
Grampeix, H. [3 ]
机构：
[1] El Manar Univ, Lab Org & Properties Mat, Tunis 1060, Tunisia
[2] FJoseph Fourier Univ, Microelect Technol Lab, French Natl Res Ctr, F-38054 Grenoble 9, France
[3] CEA LETI MINATEC, F-38054 Grenoble 9, France
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 02期
关键词：
D O I：
10.1063/1.3541961
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Metal/HfO2/Pt stacks (where the metal is Au, Ag, Co, Ni, Cr, or In) are voltage stressed to induce a high-to-low resistive transition. No current compliance is applied during stressing (except the 100 mA limit of the voltage source). As a consequence very high conductance states are reached after switching, similar to a hard breakdown. Samples conductance after breakdown can reach up to 0.1 S, depending on the metal electrode. Despite the high postbreakdown conductance level, the samples are able to recover an insulating state by further voltage biasing ("high current resistance switching"). (c) 2011 American Institute of Physics. [doi:10.1063/1.3541961]
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