Fast Neutron Detection With 4H-SiC Based Diode Detector up to 500°C Ambient Temperature

被引:32
|
作者
Szalkai, D. [1 ]
Ferone, R. [2 ]
Issa, F. [2 ]
Klix, A. [1 ]
Lazar, M. [3 ]
Lyoussi, A. [4 ]
Ottaviani, L. [2 ]
Tutto, P. [5 ]
Vervisch, V. [2 ]
机构
[1] Karlsruhe Inst Technol, Inst Neutron Phys & Reactor Technol, D-76344 Eggenstein Leopoldshafen, Germany
[2] Aix Marseille Univ, UMR 7334, IM2NP, CNRS, F-13397 Marseille 20, France
[3] INSA Lyon, UMR 5005, AMPERE, F-69621 Villeurbanne, France
[4] CEA, DEN, DER, Serv Phys Expt,Lab Dosimetrie Capteurs Instrument, F-13108 St Paul Les Durance, France
[5] Semilab Semicond Phys Lab Co Ltd, H-1117 Budapest, Hungary
关键词
Neutron detectors; silicon carbide; 4H;
D O I
10.1109/TNS.2016.2522921
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the framework of the European I-Smart project, optimal 4H-SiC based diode geometries were developed for high temperature neutron detection. Irradiation tests were conducted with 14 MeV fast neutrons supplied by a deuterium-tritium neutron generator with an average neutron yield of 4.04 x 10(10) - 5.25 x 10(10) n/s at Neutron Laboratory of the Technical University of Dresden in Germany. In this paper, we interpret the first measurements and results with 4H-SiC detector irradiated with fast neutrons from room temperature up to 500 degrees C. These experiments are serving also the first simulation of the harsh environmental condition measurements in the tritium breeding blanket of the ITER fusion reactor, which is one of the most prominent planned location of high temperature neutron flux characterization studies in the near future.
引用
收藏
页码:1491 / 1498
页数:8
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