Resonance tunneling of charge carriers in photoexcited type-II ZnSe/BeTe heterostructures

被引：2
|
作者：
Zaitsev, S. V. [1 ]
Maksimov, A. A. [1 ]
Tartakovskii, I. I. [1 ]
Yakovlev, D. R. [2 ]
Waag, A. [3 ]
机构：
[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Oblast, Russia
[2] Univ Dortmund, D-44227 Dortmund, Germany
[3] Tech Univ Carolo Wilhelmina Braunschweig, Inst Semicond Technol, D-38106 Braunschweig, Germany
来源：
SEMICONDUCTORS | 2008年 / 42卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063782608050096
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In is shown that, at high densities of spatially separated electrons and holes in type-II ZnSe/BeTe heterostructures, the conditions for resonance tunneling of photoexcited holes from the ZnSe layer to the BeTe layer are attainable. Nonlinear behavior of the intensity of the photoluminescence band corresponding to spatially direct optical transitions with photoexcitation intensity is observed. Numerical calculations are carried out, and the results are in good agreement with the experimental data in a wide region of variation of the optical pumping intensity.
引用
收藏
页码：540 / 544
页数：5
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