Damage buildup model with dose rate and temperature dependence

被引：0

作者：

Hernández-Mangas, JM ^{[1
]}

Peláz, L ^{[1
]}

Marqués, LA ^{[1
]}

Bailón, L ^{[1
]}

机构：

[1] Univ Valladolid, Dpto Electricidad & Elect, E-47011 Valladolid, Spain

来源：

2005 Spanish Conference on Electron Devices, Proceedings | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a novel statistical damage buildup model for our BCA Ion Implant Simulator (IIS) code in order to extend its ranges of applicability. The model takes into account the abrupt regime of the crystal-amorphous transition. It works with different temperatures and dose-rates and also models the transition temperature. We have tested it with some projectiles (Ge, P) implanted into silicon. In this work we describe the new statistical damage accumulation model based on the modified Kinchin Pease model. The results obtained have been compared with existing experimental results.

引用

页码：435 / 437

页数：3

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