Characterization of high performance waveguide-coupled linear mode avalanche photodiodes

被引：0

作者：

Martinez, Nicholas J. D. ^{[1
]}

DeRose, Christopher T. ^{[1
]}

Brock, Reinhard W. ^{[1
]}

Starbuck, Andrew L. ^{[1
]}

Pomerene, Andrew T. ^{[1
]}

Lentine, Anthony L. ^{[1
]}

Trotter, Douglas C. ^{[1
]}

Davids, Paul S. ^{[1
]}

机构：

[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

来源：

2016 IEEE OPTICAL INTERCONNECTS CONFERENCE (OI) | 2016年

关键词：

tranceiver; gain-bandwidth product; SACM; grating coupled; lateral multiplication region; Ge-on-Si; GAIN-BANDWIDTH PRODUCT;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present experimental results for a Ge on Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Our linear mode APD has a gain-bandwidth product in excess of 200 GHz. Furthermore, we demonstrate error free operation (BER< 10(-12)) with our waveguide coupled linear mode APD using pseudo-random bit sequence (PBRS) data at 10 Gb/s.

引用

页码：100 / 101

页数：2

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