Effect of heat treatment on the property of CuInS2 thin film prepared by chemical bath deposition

被引：0
|
作者：
Cui, Fangming [1 ]
Wang, Lei [1 ]
Chen, Xiongfei [1 ]
Sheng, Xia [1 ]
Yang, Deren [1 ]
Sun, Yun [2 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Nankai Univ, Tianjin 300071, Peoples R China
来源：
THIN FILM PHYSICS AND APPLICATIONS, SIXTH INTERNATIONAL CONFERENCE | 2008年 / 6984卷
关键词：
CuInS2; chemical bath deposition; thin film;
D O I：
10.1117/12.792396
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Uncrystallized copper indium disulphide (CuInS2) thin films have been deposited on ITO glass by chemical bath deposition (CBD) in acid conditions. Then polycrystalline CuInS2 films were obtained after sulfuration in sulfur atmosphere at 300 degrees C, 350 degrees C, 400 degrees C and 450 degrees C for 1.5 hours respectively. The films have been characterized by X-Ray diffraction (XRD), scanning electronic microscopy (SEM), precision surface profiler, energy dispersive X-ray analysis (EDX) and Hall effect measurement system. The results show that with the raising of heat treatment temperature the crystal degree and electrical property of the film are improved. Our work demonstrates the chemical bath deposition in acid conditions is a promising method for deposition of CuInS2 thin films for solar cells.
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页数：4
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