Ultrahigh-Q photonic crystal cavities in silicon rich nitride

被引：15

作者：

Debnath, Kapil ^{[1
]}

Clementi, Marco ^{[2
]}

Bucio, Thalia Dominguez ^{[1
]}

Khokhar, Ali Z. ^{[1
]}

Sotto, Moise ^{[3
]}

Grabska, Katarzyna M. ^{[1
]}

Bajoni, Daniele ^{[4
]}

Galli, Matteo ^{[2
]}

Saito, Shinichi ^{[3
]}

Gardes, Fredric Y. ^{[1
]}

机构：

[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

[2] Univ Pavia, Dipartimento Fis, Via Bassi 6, I-27100 Pavia, Italy

[3] Univ Southampton, Fac Phys Sci & Engn, Southampton SO17 1BJ, Hants, England

[4] Univ Pavia, Dipartimento Ingn Ind & Informaz, Via Ferrata 1, I-27100 Pavia, Italy

来源：

OPTICS EXPRESS | 2017年 / 25卷 / 22期

基金：

英国工程与自然科学研究理事会; 欧盟地平线“2020”;

关键词：

QUALITY-FACTOR; WAVE-GUIDES; NANOCAVITY; DEFECT;

D O I：

10.1364/OE.25.027334

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Ultrahigh-Q Photonic Crystal cavities were realized in a suspended Silicon Rich Nitride (SiNx) platform for applications at telecom wavelengths. Using a line width modulated cavity design we achieved a simulated Q of 520,000 with a modal volume of 0.77(lambda/n)(3). The fabricated cavities were measured using the resonance scattering technique and we demonstrated a measured Q of 120,000. The experimental spectra at different input power also indicate that the non-linear losses are negligible in this material platform.

引用

页码：27334 / 27340

页数：7

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