Synthesis of silicon carbide thin films by ion beam sputtering

被引：19
|
作者：
Valentini, A
Convertino, A
Alvisi, M
Cingolani, R
Ligonzo, T
Lamendola, R
Tapfer, L
机构：
[1] Univ Bari, INFM, Dipartimento Interateneo Fis, I-70126 Bari, Italy
[2] Univ Lecce, INFM, Dipartimento Sci Mat, I-73100 Lecce, Italy
[3] Univ Bari, Dipartmento Chim, I-70126 Bari, Italy
[4] CNRSM, PASTIS SS, I-72100 Brindisi, Italy
来源：
THIN SOLID FILMS | 1998年 / 335卷 / 1-2期
关键词：
optical properties; silicon carbide; X-ray diffraction; X-ray photoelectron spectroscopy;
D O I：
10.1016/S0040-6090(98)00895-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Synthesis of silicon carbide (SiC) films has been obtained by means of ion beam sputtering. The films have been grown by co-sputtering Si and C targets by means of two Ar-ion beams at substrate temperatures ranging between 30 and 700 degrees C. Chemical, structural and optical analysis have been performed on the samples. The change from amorphous to polycrystalline phase and the relative improvement of the chemical and optical properties have been observed on films grown at 700 degrees C. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：80 / 84
页数：5
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