Microwave plasma-assisted photoluminescence enhancement in nitrogen-doped ultrananocrystalline diamond film

被引：5
|
作者：
Liu, Yu Lin [1 ]
Sun, Kien Wen [1 ]
Lin, Yi Jie [2 ]
Fong, Shih-Chieh [2 ]
Lin, I. Nan [3 ]
Tai, Nyan Hwa [2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Appl Chem, Hsinchu 30010, Taiwan
[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
[3] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan
来源：
AIP ADVANCES | 2012年 / 2卷 / 02期
关键词：
ELECTRON FIELD-EMISSION; NANOCRYSTALLINE DIAMOND; COLOR-CENTERS; GENERATION; VACANCY;
D O I：
10.1063/1.4727743
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Optical properties and conductivity of nitrogen-doped ultrananocrystal diamond (UNCD) films were investigated following treatment with low energy microwave plasma at room temperature. The plasma also generated vacancies in UNCD films and provided heat for mobilizing the vacancies to combine with the impurities, which formed the nitrogen-vacancy defect centers. The generated color centers were distributed uniformly in the samples. The conductivity of nitrogen-doped UNCD films treated by microwave plasma was found to decrease slightly due to the reduced grain boundaries. The photoluminescence emitted by the plasma treated nitrogen-doped UNCD films was enhanced significantly compared to the untreated films. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4727743]
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页数：7
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