Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

被引：11
|
作者：
Li, Da [1 ]
Kunz, Thomas [1 ]
Wolf, Nadine [2 ]
Liebig, Jan Philipp [3 ]
Wittmann, Stephan [1 ]
Ahmad, Taimoor [1 ]
Hessmann, Maik T. [1 ]
Auer, Richard [1 ]
Goeken, Mathias [3 ]
Brabec, Christoph J. [1 ,4 ]
机构：
[1] Bavarian Ctr Appl Energy Res ZAE Bayern, Div Photovolta & Thermosensor, D-91058 Erlangen, Germany
[2] Bavarian Ctr Appl Energy Res ZAE Bayern, Div Energy Efficiency, D-97074 Wurzburg, Germany
[3] Univ Erlangen Nurnberg, Mat Sci & Engn, Inst 1, D-91058 Erlangen, Germany
[4] Univ Erlangen Nurnberg, Inst Mat Elect & Energy Technol, D-91058 Erlangen, Germany
来源：
THIN SOLID FILMS | 2015年 / 583卷
关键词：
Amorphous silicon; Crystalline silicon thin film; Double layer antireflection coating; Surface passivation; Graphite substrate; Focus ion beam; Scanning transmission electron microscopy; SURFACE PASSIVATION; CRYSTALLINE SI; LAYER; EFFICIENCY; RECOMBINATION; TEMPERATURE;
D O I：
10.1016/j.tsf.2015.03.051
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 mu m thick 4 cm(2) aperture area on the graphite substrate. The optical properties of the SiNx/a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiNx/a-Si:H(i) stack using focus ion beam preparation. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：25 / 33
页数：9
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