Analysis of composition and microstructures of Ge grown on porous silicon using Raman spectroscopy and transmission electron microscopy

被引：10

作者：

Aouassa, Mansour ^{[1
]}

Jadli, Imen ^{[1
]}

Hassayoun, Latifa Slimen ^{[1
]}

Maaref, Hassen ^{[1
]}

Panczer, Gerard ^{[2
]}

Favre, Luc ^{[3
]}

Ronda, Antoine ^{[3
]}

Berbezier, Isabelle ^{[3
]}

机构：

[1] Fac Sci, LMON, Environm St, Monastir 5019, Tunisia

[2] Univ Lyon 1, UMR5306, Inst Lumiere Matiere, CNRS, F-69622 Villeurbanne, France

[3] UMR CNRS 6137, Inst Mat Microelect Nanosci Provence, Ave Normandie Niemen, F-13397 Marseille 20, France

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 112卷

关键词：

Ge growth; Porous silicon; Molecular beam epitaxy; Raman spectroscopy; Transmission electron microscopy; OPTICAL WAVE-GUIDES; VISIBLE PHOTOLUMINESCENCE; PHYSICAL-PROPERTIES; SIGE ISLANDS; STRAIN; LAYERS; OPTOELECTRONICS; SUPERLATTICES; MECHANISMS;

D O I：

10.1016/j.spmi.2017.10.003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Composition and microstructure of Ge grown on porous silicon (PSi) by Molecular Beam Epitaxy (MBE) at different temperatures are examined using High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. Ge grown at 400 degrees C on PSi buffer produces a planar Ge film with high crystalline quality compared to Ge grown on bulk Si. This result is attributed to the compliant nature of PSi. Increasing growth temperature >600 degrees C, changes the PSi morphology, increase the Ge/Si intermixing in the pores during Ge growth and lead to obtain a composite SiGe/Si substrate. Ge content in the composite SiGe substrate can controlled via growth temperature. These substrates serve as low cost virtual substrate for high efficiency III V/Si solar cells. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：493 / 498

页数：6

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