Semiconducting nanocrystalline iron disilicide thin films prepared by pulsed-laser ablation

被引：55
|
作者：
Yoshitake, T
Yatabe, M
Itakura, M
Kuwano, N
Tomokiyo, Y
Nagayama, K
机构：
[1] Kyushu Univ, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan
[2] Kyushu Univ, Dept Aeronaut & Astronaut, Higashi Ku, Fukuoka 8128580, Japan
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 15期
关键词：
D O I：
10.1063/1.1617374
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Amorphous iron silicide was reported to be semiconducting as well as beta-FeSi2, and it has received considerable attention from both the physical and engineering points of view. However, there have been few studies and its basic properties are still unknown. We could grow the semiconducting nanocrystalline iron disilicide thin films by pulsed-laser deposition using an FeSi2 target. They consist of crystallites with diameters ranging from 3 to 5 nm. The carrier density and the mobility at 300 K were 1.5x10(19) cm(-3) and 35 cm/V s, respectively. (C) 2003 American Institute of Physics.
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页码：3057 / 3059
页数：3
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