Comparison of Ionic Liquid and Ion-Gel Top-Gate MoS2 Field-Effect Transistors

被引：1

作者：

Oh, Guen Hyung

Kim, TaeWan ^{[1
]}

机构：

[1] Jeonbuk Natl Univ, Dept Elect Engn, Jeonju 54896, South Korea

来源：

APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY | 2021年 / 30卷 / 05期

关键词：

MoS2; Top-gate; Field-effect transistor; Ionic liquid; Ion-gel; LAYER MOS2;

D O I：

10.5757/ASCT.2021.30.5.156

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polymer electrolytes and ionic liquids (ILs) have attracted significant interest in applications as gate dielectrics. In this study, we fabricated top-gated molybdenum disulfide (MoS2) thin-film transistors using IL and ion-gel (IG) gate dielectrics. Room-temperature Raman spectra measurements indicated a dominant peak spectral emission at 358 cm(-1) (E-2g(1)) and 406.44 cm(-1) (A(1g)) associated with bilayer MoS2 films. The fabricated thin-film field-effect transistors (FET) with IG gate dielectric exhibited band transport with a highest mobility of 0.5 cm(2)/V.s, and a poor I-ON/I-OFF ratio of similar to 10. By contrast, the FET with IL gate dielectric exhibited a 3400 % improvement in terms of the mobility (17.9 cm(2)/V.s), and a 1000 % improvement of the I-ON/I-OFF ratio (similar to 100).

引用

页码：156 / 158

页数：3

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