Quantitative scanning evanescent microwave microscopy and its applications in characterization of functional materials libraries

被引：55

作者：

Gao, C ^{[1
]}

Hu, B

Takeuchi, I

Chang, KS

Xiang, XD

Wang, G

机构：

[1] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China

[2] Univ Sci & Technol China, Struct Res Lab, Hefei 230029, Anhui, Peoples R China

[3] Univ Maryland, Small Smart Syst Ctr, Dept Mat Sci & Engn, College Pk, MD 20742 USA

[4] Univ Maryland, Ctr Superconduct Res, College Pk, MD 20742 USA

[5] Intematix Corp, Moraga, CA 94556 USA

来源：

MEASUREMENT SCIENCE AND TECHNOLOGY | 2005年 / 16卷 / 01期

关键词：

combinatorial material science; high-throughput characterization; scanning evanescent microwave microscopy; near-field microscopy; dielectric/ferroelectric materials; dielectric constant; electric impedance;

D O I：

10.1088/0957-0233/16/1/033

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper gives a comprehensive review on the advances in the field of scanning evanescent microwave microscopy, as a high-throughput characterization tool for electrical properties. Theoretical model analyses used for performing quantitative non-destructive characterization of various materials are presented. Examples of applications of the microwave microscopy to the rapid measurements of dielectric/ferroelectric libraries are given.

引用

页码：248 / 260

页数：13

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