Comparison of MOSFET-threshold-voltage extraction methods

被引：79

作者：

Terada, K ^{[1
]}

Nishiyama, K ^{[1
]}

Hatanaka, K ^{[1
]}

机构：

[1] Hiroshima City Univ, Fac Informat Sci, Asa Minami Ku, Hiroshima 7313194, Japan

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 01期

关键词：

D O I：

10.1016/S0038-1101(00)00187-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The difference in MOSFET threshold voltages caused by the difference in the extraction method is studied, by measuring and analyzing its dependencies on channel length, substrate voltage and drain voltage. It is found that the standard deviation of the difference between threshold voltages caused by the difference in the extraction method is less than that of the threshold voltage itself in a wafer. The dependencies of the threshold voltage on channel length, extracted from the drain current data around the threshold voltage, however, show different behavior from those extracted from the drain current data only in the subthreshold region or only in the ON region. It is considered that "channel-length modulation" causes this different behavior and, therefore, that those extraction methods are not desirable. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：35 / 40

页数：6

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