Nanoscale Memristors: Devices Engineering, CMOS Integration and Novel Applications

被引：0
|
作者：
Xia, Qiangfei [1 ]
机构：
[1] Univ Massachusetts, Dept Elect & Comp Engn, Nanodevices & Integrated Syst Lab, Amherst, MA 01003 USA
来源：
2015 IEEE INTERNATIONAL CONFERENCE ON DIGITAL SIGNAL PROCESSING (DSP) | 2015年
关键词：
memristor; scaling; reactive sputtering; SiOx devices; hybrid circuits;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We scaled the memristor devices in a crossbar arrays down to 8 nm using nanoimprint lithography. With reactive sputtering, we tuned the electrical properties of TiOx based memristors. We developed a silicon oxide device with ultra-thin layer chemically produced oxide that exhibited low voltage and electrode-dependent switching behavior. Finally, we integrated planar memristive devices with CMOS substrates, implementing hybrid circuits with lower switching voltage and better uniformity.
引用
收藏
页码：1216 / 1218
页数：3
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