Micro and Nano Structural Characterization of SiC

被引：0

作者：

Chandran, Narendraraj ^{[1
]}

Andreadou, Ariadne ^{[1
]}

Mantzari, Alkyoni ^{[1
]}

Marinova, Maya ^{[2
]}

Polychroniadis, Efstathios K. ^{[1
]}

机构：

[1] Aristotle Univ Thessaloniki, Dept Phys, GR-54124 Thessaloniki, Greece

[2] Univ Paris 11, Phys Solides Lab, F-91405 Orsay, France

来源：

INTERNATIONAL MULTIDISCIPLINARY MICROSCOPY CONGRESS | 2014年 / 154卷

关键词：

SUBLIMATION EPITAXY; SIC(0001); GROWTH; TEM; GE;

D O I：

10.1007/978-3-319-04639-6_1

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

For the last decades, substantial research has been focused on the development of Silicon Carbide electronic devices thanks to its outperformance over Silicon. A review of the author's recent results on the microstructure of SiC layers studied by Transmission ElectronMicroscopy is presented in the currentwork. Structural defects appearing in epilayers grown by different methods will be presented. The studied samples were grown by different means-from vapour phase techniques such as Physical Vapour Transport, Chemical Vapour Deposition and Sublimation Epitaxy.

引用

页码：3 / 10

页数：8

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