Observation of triplet superconductivity in CoSi2/TiSi2 heterostructures

被引:23
|
作者
Chiu, Shao-Pin [1 ,2 ]
Tsuei, C. C. [3 ,4 ]
Yeh, Sheng-Shiuan [1 ,2 ,5 ]
Zhang, Fu-Chun [6 ,7 ]
Kirchner, Stefan [8 ,9 ,10 ]
Lin, Juhn-Jong [1 ,2 ,11 ]
机构
[1] Natl Yang Ming Chiao Tung Univ, Inst Phys, Hsinchu 30010, Taiwan
[2] Natl Yang Ming Chiao Tung Univ, Ctr Emergent Funct Matter Sci, Hsinchu 30010, Taiwan
[3] IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[4] Acad Sinica, Inst Phys, Taipei 11529, Taiwan
[5] Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan
[6] Univ Chinese Acad Sci, Kavli Inst Theoret Sci, Beijing 100190, Peoples R China
[7] Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100190, Peoples R China
[8] Zhejiang Univ, Zhejiang Inst Modern Phys, Hangzhou 310027, Peoples R China
[9] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
[10] Zhejiang Univ, Zhejiang Prov Key Lab Quantum Technol & Device, Hangzhou 310027, Peoples R China
[11] Natl Yang Ming Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
基金
美国国家科学基金会;
关键词
TUNNELING SPECTROSCOPY; CONDUCTANCE; STATES; BREAKING; FERMIONS; SURFACE; FILMS;
D O I
10.1126/sciadv.abg6569
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Unconventional superconductivity and, in particular, triplet superconductivity have been front and center of topological materials and quantum technology research. Here, we report our observation of triplet pairing in nonmagnetic CoSi2/TiSi2 heterostructures on silicon. CoSi2 undergoes a sharp superconducting transition at a critical temperature T-c similar or equal to 1.5 K, while TiSi2 is a normal metal. We investigate conductance spectra of both two-terminal CoSi2/TiSi2 contact junctions and three-terminal T-shaped CoSi2/TiSi2 superconducting proximity structures. Below T-c, we observe (i) a narrow zero-bias conductance peak on top of a broad hump, accompanied by two symmetric side dips in the contact junctions, (ii) a narrow zero-bias conductance peak in T-shaped structures, and (iii) hysteresis in the junction magnetoresistance. These three independent and complementary observations point to chiral p-wave pairing in CoSi2/TiSi2 heterostructures. The excellent fabrication compatibility of CoSi2 and TiSi2 with present-day silicon-based integrated-circuit technology suggests their potential use in scalable quantum-computing devices.
引用
收藏
页数:9
相关论文
共 50 条
  • [21] Comparison of TiSi2, CoSi2, and NiSi for thin-film silicon-on-insulator applications
    Chen, J
    Colinge, JP
    Flandre, D
    Gillon, R
    Raskin, JP
    Vanhoenacker, D
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (07) : 2437 - 2442
  • [22] Comparison of TiSi2, CoSi2, and NiSi for thin-film silicon-on-insulator applications
    Universite Catholique de Louvain, Louvain-la-Neuve, Belgium
    J Electrochem Soc, 7 (2437-2442):
  • [23] XAFS studies of TiSi2 and CoSi2 thin films at the Ti, Co and Si K-edge
    Coulthard, I
    Sham, TK
    SimardNormandin, M
    Saran, M
    Garrett, JD
    JOURNAL DE PHYSIQUE IV, 1997, 7 (C2): : 1135 - 1136
  • [24] Phase and mechanical stress in and surrounding TiSi2 and CoSi2 lines studied by micro-Raman spectroscopy
    DeWolf, I
    Howard, DJ
    Maex, K
    Maes, HE
    ADVANCED METALLIZATION FOR FUTURE ULSI, 1996, 427 : 47 - 52
  • [25] Stress reliability comparison of metal-oxide-semiconductor devices with COSi2 and TiSi2 gate electrode
    Wu, YL
    Lai, MY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11): : L257 - L258
  • [26] STRESS-INDUCED PRECIPITATION OF DOPANTS DIFFUSED INTO SI FROM TISI2 AND COSI2 IMPLANTED LAYERS
    LAVIA, F
    PRIVITERA, V
    SPINELLA, C
    RIMINI, E
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (07) : 1196 - 1203
  • [27] SUPERCONDUCTIVITY OF INTERMETALLIC COMPOUND COSI2
    TSUTSUMI, K
    TAKAYANAGI, S
    ISHIKAWA, M
    HIRANO, T
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1995, 64 (06) : 2237 - 2238
  • [28] PARALLEL AND PERPENDICULAR TRANSPORT IN SI/COSI2 AND SI/COSI2/SI HETEROSTRUCTURES
    BADOZ, PA
    ROSENCHER, E
    BRIGGS, A
    DAVITAYA, FA
    SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (05) : 425 - 427
  • [29] Stress reliability comparison of metal-oxide-semiconductor devices with CoSi2 and TiSi2 gate electrode materials
    Wu, You-Lin
    Lai, Min-Yen
    Japanese Journal of Applied Physics, Part 2: Letters, 2006, 45 (8-11):
  • [30] THERMAL-OXIDATION OF THE SILICIDES - COSI2, CRSI2, NISI2, PTSI, TISI2, AND ZRSI2
    STRYDOM, WJ
    PRETORIUS, R
    LOMBARD, JC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C320 - C320