Reaction diffusion in Mo-Si system above the melting point of silicon

被引：4
|
作者：
Galstyan, GS [1 ]
Chatilyan, HA
Kirakosyan, AG
Kharatyan, SL
Mukasyan, AS
Varma, A
机构：
[1] Yerevan State Univ, Yerevan 375049, Armenia
[2] Nalbandyan Inst Chem Phys NAS RA, Yerevan 375049, Armenia
[3] Univ Notre Dame, Notre Dame, IN 46556 USA
[4] Purdue Univ, W Lafayette, IN 47907 USA
来源：
DIFFUSION IN MATERIALS: DIMAT 2004, PTS 1 AND 2 | 2005年 / 237-240卷
关键词：
reaction diffusion; silicon; molybdenum; silicides; melt; high-temperature;
D O I：
10.4028/www.scientific.net/DDF.237-240.873
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The results of direct kinetic measurements and SEM observations on formation of silicide phases in Mo-Si system at temperatures 1400-1700 degrees C are presented in the work. It was shown, that the formation of MoSi2 proceeds by two different mechanisms and accordingly, two types of microstructures are formed: (i) a compact layer (usually with expressed columnar structure) by the reaction diffusion mechanism; and (ii) separated fine grains by crystallization in the volume of saturated Me-Si melt. A model of product formation is offered which allows to calculate the relative contributions of the two mechanisms of disilicide phase formation at various stages of interaction and to estimate the role each of them in the total process.
引用
收藏
页码：873 / 878
页数：6
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