Linewidth enhancement factor of quantumdot lasers

被引：22
|
作者：
Qasaimeh, O [1 ]
机构：
[1] Jordan Univ Sci & Technol, Dept Elect Engn, Irbid 22110, Jordan
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2005年 / 37卷 / 05期
关键词：
hole energy spacing; laser; linewidth enhancement factor; quantum dot;
D O I：
10.1007/s11082-005-4224-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The linewidth enhancement factor (alpha) of inhomogenously broadened InAs/GaAs quantum dot (QD) lasers is studied taking into account the effect of the multi-discrete QD energy levels for both electrons and holes. The effect of size-fluctuation and the separation between the energy states on alpha for different applied bias is studied. Very small value of a (similar to 0.3) is obtained at high-applied bias. This value is smaller than the linewidth enhancement factor in quantum well lasers. An empirical formula for the linewidth enhancement factor is also derived.
引用
收藏
页码：495 / 507
页数：13
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