Waveguide-Integrated van der Waals Heterostructure Mid-Infrared Photodetector with High Performance

被引:25
|
作者
Chen, Po-Liang [1 ]
Chen, Yueyang [2 ]
Chang, Tian-Yun [1 ]
Li, Wei-Qing [1 ]
Li, Jia-Xin [1 ]
Lee, Seokhyeong [2 ]
Fang, Zhuoran [2 ]
Li, Mo [2 ,3 ]
Majumdar, Arka [2 ,3 ]
Liu, Chang-Hua [1 ,4 ]
机构
[1] Natl Tsing Hua Univ, Inst Photon Technol, Hsinchu 30013, Taiwan
[2] Univ Washington, Dept Elect & Comp Engn, Seattle, WA 98195 USA
[3] Univ Washington, Dept Phys, Seattle, WA 98195 USA
[4] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan
关键词
black phosphorus; van der Waals heterostructures; photodetector; mid-infrared; silicon photonics; ULTRA-BROAD-BAND; OPTICAL-PROPERTIES; HIGH-RESPONSIVITY; SILICON; PHOTONICS;
D O I
10.1021/acsami.2c01094
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Extending the operation wavelength of silicon photonics to the mid-infrared (mid-IR) band will significantly benefit critical application areas, including health care, astronomy, and chemical sensing. However, a major hurdle for mid-IR silicon photonics has been the lack of high-speed, high-responsivity, and low noise-equivalent power (NEP) photodetectors. Here, we demonstrate a van der Waals (vdW) heterostructure mid-IR photodetector integrated on a silicon-on-insulator (SOI) waveguide. The detector is composed of vertically stacked black phosphorus (BP)/molybdenum ditelluride (MoTe2). We measured high responsivity (up to 0.85 A/W) over a 3-4 mu m spectral range, indicating that waveguide-confined light could strongly interact with vdW heterostructures on top. In addition, the waveguide- integrated detector could be modulated at high speed (>10 MHz) and its switching performance shows excellent stability. These results, together with the noise analysis, indicate that the NEP of the detector is as low as 8.2 pW/Hz(1/2). This reported critical missing piece in the silicon photonic toolbox will enable the wide-spread adoption of mid-IR integrated photonic circuits.
引用
收藏
页码:24856 / 24863
页数:8
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