A proposed single grain-boundary thin-film transistor

A new Si thin-film transistor (TFT) has been proposed where only one grain-boundary exists at the center of channel, and the source and drain are within single grains with good crystallinity, The device fabricated by an excimer-laser crystallization method at the maximum temperature of 500 degreesC, had the on-off current ratio congruent to 10(6), the field-effect mobility congruent to 330 cm(2)/Vs and the subthreshold swing congruent to 1.1 V/dec, respectively, For the device processed at 800 degreesC, they are >10(6), >450 cm(2)/Vs and congruent to 0.51 V/dec, respectively.