Analysis and Comparison on Motor Core Losses with Si-IGBT and SiC-MOSFET Inverter Excitations

被引:0
|
作者
Nguyen, G. [1 ]
Odawara, S. [2 ]
Fujisaki, K. [3 ]
Iwamoto, F. [4 ]
Yamada, T. [4 ]
Sasaya, T. [4 ]
机构
[1] Toyota Technol Inst, Res Ctr Smart Vehicles, Nagoya, Aichi, Japan
[2] Kitami Inst Technol, Kitami, Hokkaido, Japan
[3] Toyota Technol Inst, Electromagnet Energy Syst Lab, Nagoya, Aichi, Japan
[4] DENSO Corp, Adv Res & Innovat Div, Kariya, Aichi, Japan
来源
2018 IEEE INTERNATIONAL MAGNETIC CONFERENCE (INTERMAG) | 2018年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页数:2
相关论文
共 50 条
  • [21] Switching behavior of a hybrid Si-IGBT and SiC MOSFET based ANPC Topology
    Lakshmeesha, Srikanth
    Kahraman, Civan Lezgin
    Rosado, Sebastian
    Wijekoon, Thiwanka
    2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2021, : 293 - 298
  • [22] Loss / Resistance Evaluation of SiC-MOSFET and Si-IGBT in a Novel Type of Single-Ended Wireless V2H
    Murakami, Aoi
    Omori, Hideki
    Ohara, Shinya
    Fukuda, Kenji
    Michikoshi, Hisato
    Kimura, Noriyuki
    Morizane, Toshimitsu
    Nakaoka, Mutsuo
    2017 IEEE PELS WORKSHOP ON EMERGING TECHNOLOGIES - WIRELESS POWER TRANSFER (WOW), 2017,
  • [23] Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications
    Abdalgader, Ibrahim A. S.
    Kivrak, Sinan
    Ozer, Tolga
    MICROMACHINES, 2022, 13 (02)
  • [24] Research on Capacitor-Switching Semi-Full-Bridge Submodule of Modular Multilevel Converter Using Si-IGBT and SiC-MOSFET
    Xu, Chen
    He, Jialu
    Lin, Lei
    IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2021, 9 (04) : 4814 - 4825
  • [25] Comparison between Si IGBT and SiC MOSFET Inverters for AC Motor Drive
    Sivkov, Oleg
    Novak, Martin
    Novak, Jaroslav
    PROCEEDINGS OF THE 2018 18TH INTERNATIONAL CONFERENCE ON MECHATRONICS - MECHATRONIKA (ME), 2018, : 83 - 87
  • [26] Neutral Leg Design and Control of Electric Vehicle On-board Bidirectional Charger Based on SiC-MOSFET and Si-IGBT Hybrid Devices
    Fu Y.
    Ren H.
    Li H.
    Shi L.
    Lei M.
    Yan K.
    Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, 2020, 40 (19): : 6330 - 6344
  • [27] SiC-MOSFET or Si-IGBT: Comparison of Design and Key Characteristics of a 690 V Grid-Tied Industrial Two-Level Voltage Source Converter
    Fuentes, Carlos D.
    Mueller, Marcus
    Bernet, Steffen
    Kouro, Samir
    ENERGIES, 2021, 14 (11)
  • [28] Comparison of Hybrid 3.3kV Si-IGBT/SiC-Schottky and 3.3kV Si-IGBT/Si technologies
    Sharma, Y. K.
    Mumby-Croft, P.
    Ngwendson, L.
    Coulbeck, L.
    Birkett, M.
    Jiang, H.
    Wang, Y.
    Deviny, I.
    2018 20TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'18 ECCE EUROPE), 2018,
  • [29] Performance Comparison and Device Analysis Between Si IGBT and SiC MOSFET
    Albanna, Ahmad
    Malburg, Andrew
    Anwar, Mohammad
    Guta, Atul
    Tiwari, Nidhi
    2016 IEEE TRANSPORTATION ELECTRIFICATION CONFERENCE AND EXPO (ITEC), 2016,
  • [30] SiC-MOSFET与Si-IGBT混合开关车载双向充电器中线桥臂设计及控制
    付永升
    任海鹏
    李翰山
    石磊
    雷鸣
    闫克丁
    中国电机工程学报, 2020, 40 (19) : 6330 - 6345