Transient photoluminescence enhancement as a probe of the structure of impurity-trapped excitons in CaF2:Yb2+

被引：20

作者：

Reid, Michael F. ^{[1
,2
]}

Senanayake, Pubudu S. ^{[1
]}

Wells, Jon-Paul R. ^{[1
]}

Berden, Giel ^{[3
]}

Meijerink, Andries ^{[4
]}

Salkeld, Alexander J. ^{[1
]}

Duan, Chang-Kui ^{[5
]}

Reeves, Roger J. ^{[1
,2
]}

机构：

[1] Univ Canterbury, Dept Phys & Astron, Christchurch 8140, New Zealand

[2] Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8140, New Zealand

[3] FOM Inst Plasmaphys Rijnhuizen, FELIX Free Electron Laser Facil, NL-3430 BE Nieuwegein, Netherlands

[4] Univ Utrecht, Debye Inst NanoMat Sci, NL-3508 TA Utrecht, Netherlands

[5] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 11期

关键词：

PHOTOIONIZATION PROCESSES; IONIC-CRYSTALS; LUMINESCENCE; LANTHANIDES; CENTERS; CAF2;

D O I：

10.1103/PhysRevB.84.113110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate a direct measurement of the energy levels of impurity-trapped excitons in CaF2:Yb2+. The radically different radiative decay rates of the lowest exciton state and higher excited states enable the generation of a transient photoluminescence enhancement measured via a two-step excitation process. We observe sharp transitions arising from changes of state of localized electrons, broad bands associated with changes of state of delocalized electrons, and broad bands arising from trap liberation.

引用

页数：4

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