Ab initio energetics of lanthanum substitution in ferroelectric bismuth titanate

被引:15
|
作者
Shah, S. H. [1 ]
Bristowe, P. D. [1 ]
机构
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
基金
英国工程与自然科学研究理事会;
关键词
ELECTRONIC-STRUCTURE; CRYSTAL STRUCTURE; PHASE-STABILITY; PLANE-WAVE; 1ST-PRINCIPLES; BI4TI3O12; DIFFRACTION; CERAMICS; ENERGY; FILMS;
D O I
10.1088/0953-8984/23/15/155902
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using first principles calculations and atomistic thermodynamics the bulk and defect properties of orthorhombic bismuth titanate (Bi(4)Ti(3)O(12)) and bismuth lanthanum titanate (Bi(3.25)La(0.75)Ti(3)O(12)) have been investigated. Heats of formation, valid chemical conditions for synthesis, lanthanum substitution energies and oxygen and bismuth vacancy formation energies have been computed. The study improves our understanding of how native point defects and substitutional impurities influence the ferroelectric properties of these layered perovskite materials. It is found that lanthanum incorporation could occur on either of the two distinct bismuth sites in the structure and that the effect of substitution is to increase the formation energy of nearby native oxygen vacancies. The results provide direct atomistic evidence over a range of chemical conditions supporting the suggestion that lanthanum incorporation reduces the oxygen vacancy concentration. Oxygen vacancies contribute to ferroelectric fatigue by interacting strongly with domain walls, and therefore a decrease in their concentration is beneficial. The conditions that favor the greatest reduction in oxygen vacancy concentration are described.
引用
收藏
页数:12
相关论文
共 50 条
  • [41] Quantifying texture in ferroelectric bismuth titanate ceramics
    Jones, JL
    Vogel, SC
    Slamovich, EB
    Bowman, KJ
    SCRIPTA MATERIALIA, 2004, 51 (12) : 1123 - 1127
  • [42] THE FERROELECTRIC PROPERTIES OF STRONTIUM-BISMUTH TITANATE
    GUBKIN, AN
    SOVIET PHYSICS-SOLID STATE, 1961, 2 (12): : 2732 - 2737
  • [43] Engineering polarization rotation in ferroelectric bismuth titanate
    Roy, Amritendu
    Prasad, Rajendra
    Auluck, Sushil
    Garg, Ashish
    APPLIED PHYSICS LETTERS, 2013, 102 (18)
  • [44] PREPARATION BY SPUTTERING OF FILMS OF FERROELECTRIC BISMUTH TITANATE
    TAKEI, WJ
    FORMIGON.NP
    FRANCOMB.MH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (05): : 904 - &
  • [45] Synthesis and characterization of lanthanum doped sodium bismuth titanate
    Aparna, M
    Bhimasankaram, T
    Kumar, GS
    Prasad, G
    MODERN PHYSICS LETTERS B, 2002, 16 (26): : 1007 - 1019
  • [46] Ferroelectric and dielectric properties of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method
    Simoes, AZ
    Gonzalez, AHM
    Riccardi, CS
    Souza, EC
    Moura, F
    Zaghete, MA
    Longo, E
    Varela, JA
    JOURNAL OF ELECTROCERAMICS, 2004, 13 (1-3) : 65 - 70
  • [47] Lanthanum modified bismuth titanate prepared by a hydrolysis method
    Kan, YM
    Jin, XH
    Zhang, GJ
    Wang, PL
    Cheng, YB
    Yan, DS
    JOURNAL OF MATERIALS CHEMISTRY, 2004, 14 (24) : 3566 - 3570
  • [48] Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates
    Lee, HN
    Hesse, D
    Zakharov, N
    Lee, SK
    Gösele, U
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) : 5592 - 5601
  • [49] Ferroelectric and Dielectric Properties of Lanthanum-Modified Bismuth Titanate Thin Films Obtained by the Polymeric Precursor Method
    A. Z. Simões
    A. H. M. Gonzalez
    C. S. Riccardi
    E. C. Souza
    F. Moura
    M. A. Zaghete
    E. Longo
    J. A. Verela
    Journal of Electroceramics, 2004, 13 : 65 - 70
  • [50] Ferroelectric properties of lanthanum-doped bismuth titanate thin films grown by a sol-gel method
    Bae, JC
    Kim, SS
    Choi, EK
    Song, TK
    Kim, WJ
    Lee, YI
    THIN SOLID FILMS, 2005, 472 (1-2) : 90 - 95