Impacts of KF Post-Deposition Treatment on the Band Alignment of Epitaxial Cu(In,Ga)Se2 Heterojunctions

被引：3

作者：

Nagai, Takehiko ^{[1
]}

Nishinaga, Jiro ^{[1
]}

Tampo, Hitoshi ^{[1
]}

Kim, Shinho ^{[2
]}

Hirayama, Kazuhiro ^{[3
]}

Matsunobe, Tatsuo ^{[3
]}

Chen, Guanzhong ^{[3
]}

Ide, Yuya ^{[3
]}

Ishizuka, Shogo ^{[1
]}

Shibata, Hajime ^{[1
]}

Niki, Shigeru ^{[1
]}

Terada, Norio ^{[3
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Inst Energy Conservat, Tsukuba, Ibaraki 3058568, Japan

[2] Pusan Natl Univ, Inst Mat Technol, Busan 46241, South Korea

[3] Kagoshima Univ, Grad Sch Sci & Engn, Kagoshima 8900065, Japan

来源：

ACS APPLIED MATERIALS & INTERFACES | 2022年 / 14卷 / 14期

关键词：

IPES; UPS; XPS; post-deposition treatment; band alignment; CIGS; THIN-FILMS; SOLAR-CELLS; ELECTRONIC-STRUCTURE; SINGLE-CRYSTAL; POTASSIUM; CUINSE2; GROWTH; NA; INTERFACE; FLUORIDE;

D O I：

10.1021/acsami.1c21193

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this study, we investigated band alignments at CdS/epitaxial CuInxGa1-xSe2 (epi-CIGSe) and epi-CIGSe/GaAs heterointerfaces for solar cell applications using ultraviolet, inverse, and X-ray photoemission spectroscopy (UPS, IPES, and XPS) techniques. We clarified the impacts of KF postdeposition treatment (KF-PDT) at the CdS/epi-CIGSe front heterointerfaces. We found that KF-PDT changed the conduction band alignment at the CdS/epi-CIGSe heterointerface from a cliff to flat configuration, attributed to an increase in the electron affinity (E-A) and ionization potential (I-p) of the epi-CIGSe surface because of a decrease in Cu and Ga contents. Herein, we discuss the correlation between the impacts of KF-PDT and the solar cell performance. Furthermore, we also investigated the band alignment at the epi-CIGSe/GaAs rear heterointerface. Electron barriers were formed at the epi-CIGSe/GaAs interface, suppressing carrier recombination as the back surface field. Contrarily, a hole accumulation layer is formed by the valence band bending, which is like Ohmic contact.

引用

页码：16780 / 16790

页数：11

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