Circular photogalvanic effect at inter-band excitation in InN

被引：15
|
作者：
Zhang, Z. [1 ,2 ]
Zhang, R. [1 ,2 ]
Liu, B. [1 ,2 ]
Xie, Z. L. [1 ,2 ]
Xiu, X. Q. [1 ,2 ]
Han, R. [1 ,2 ]
Lu, H. [1 ,2 ]
Zheng, Y. D. [1 ,2 ]
Chen, Y. H. [3 ]
Tang, C. G. [3 ]
Wang, Z. G. [3 ]
机构：
[1] Nanjing Univ, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[3] Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100085, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2008年 / 145卷 / 04期
基金：
高等学校博士学科点专项科研基金; 中国国家自然科学基金;
关键词：
InN; photogalvanic; inter-band transition;
D O I：
10.1016/j.ssc.2007.10.040
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The circular photogalvanic effect (CPGE) is observed in InN at inter-band excitation. The function of the CPGE induced current on laser helicity is experimentally demonstrated and illustrated with the microscopic model. A spin-dependent current obtained in InN is one order larger than in the AlGaN/GaN heterostructures at inter-band excitation. The dependence of CPGE current amplitude on light power and incident angle can be well evaluated with phenomenological theory. This sizeable spin-dependent current not only provides an opportunity to realize spin polarized current at room temperature, but also can be utilized as a reliable tool of spin splitting investigation in semiconductors. (c) 2007 Published by Elsevier Ltd.
引用
收藏
页码：159 / 162
页数：4
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