Circular photogalvanic effect at inter-band excitation in InN

被引：15

作者：

Zhang, Z. ^{[1
,2
]}

Zhang, R. ^{[1
,2
]}

Liu, B. ^{[1
,2
]}

Xie, Z. L. ^{[1
,2
]}

Xiu, X. Q. ^{[1
,2
]}

Han, R. ^{[1
,2
]}

Lu, H. ^{[1
,2
]}

Zheng, Y. D. ^{[1
,2
]}

Chen, Y. H. ^{[3
]}

Tang, C. G. ^{[3
]}

Wang, Z. G. ^{[3
]}

机构：

[1] Nanjing Univ, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[3] Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100085, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2008年 / 145卷 / 04期

基金：

高等学校博士学科点专项科研基金; 中国国家自然科学基金;

关键词：

InN; photogalvanic; inter-band transition;

D O I：

10.1016/j.ssc.2007.10.040

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The circular photogalvanic effect (CPGE) is observed in InN at inter-band excitation. The function of the CPGE induced current on laser helicity is experimentally demonstrated and illustrated with the microscopic model. A spin-dependent current obtained in InN is one order larger than in the AlGaN/GaN heterostructures at inter-band excitation. The dependence of CPGE current amplitude on light power and incident angle can be well evaluated with phenomenological theory. This sizeable spin-dependent current not only provides an opportunity to realize spin polarized current at room temperature, but also can be utilized as a reliable tool of spin splitting investigation in semiconductors. (c) 2007 Published by Elsevier Ltd.

引用

页码：159 / 162

页数：4

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