High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance

被引：8

作者：

Chen, W. ^{[1
]}

Zhou, C. ^{[2
]}

Chen, K. J. ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Sci, Kowloon, Hong Kong, Peoples R China

来源：

ELECTRONICS LETTERS | 2010年 / 46卷 / 24期

基金：

高等学校博士学科点专项科研基金; 中国国家自然科学基金;

关键词：

FIELD-EFFECT RECTIFIER; HFETS;

D O I：

10.1049/el.2010.1950

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-voltage normally-off AlGaN/GaN hybrid-gate HEMT (HG-HEMT) with high current-density and low on-resistance on Si substrate is fabricated. The proposed device features a hybrid-gate consisting of a short E-mode gate and a long D-mode gate. In the off-state, the short E-mode gate confirms the normally-off operation, while the D-mode gate can clamp the channel potential at a low drain voltage, which delivers high blocking capability. In the on-state, the short E-mode channel and the D-mode channel providing lower channel resistance facilitate high on-current or low on-resistance. Therefore, the HG-HEMT achieves a high breakdown voltage and low on-resistance simultaneously. Compared with the conventional device, the HG-HEMT is shown to deliver comparable breakdown voltage while featuring 62% lower on-resistance.

引用

页码：1626 / 1627

页数：2

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