In2O3 thin films based gas-sensors for NO2 and O3 detection

In2O3 thin films were prepared by the sol-gel process, by using an indium oxide sol obtained through a chemical complexation modified process. XRD measurements performed on the film deposited onto glass substrates show that the crystallization of the oxide takes place after heating at 300 degrees C in air and that the films prepared in this way have a smaller grain size than the films prepared with the traditional process. The gas sensing properties of the samples towards CO, NO2 and O-3 were also analysed. The In2O3 thin films showed high response to NO2 and O-3 and no cross sensitivity with CO.