Modeling of dielectric charging in electrostatic MEMS switches

被引：7

作者：

Koszewski, A. ^{[1
]}

Souchon, F. ^{[1
]}

Dieppedale, Ch ^{[1
]}

Ouisse, T. ^{[2
]}

机构：

[1] CEA LETI MINATEC, Grenoble, France

[2] Grenoble INP, CNRS, UMR 5628, LMGP, Grenoble, France

来源：

MICROELECTRONICS RELIABILITY | 2010年 / 50卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2010.07.104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The most important failure mechanism for electrostatic MEMS switches is dielectric charging, which contributes to a significant reduction of the device lifetime. In this study the correlation between the dielectric properties and the switch lifetime is evaluated. The conduction mechanism and trapping kinetics for two types of PECVD SiNx are determined by I-V sweeps and constant-current injections from Metal-Insulator-Metal (MIM) capacitors. This type of procedure is used as a basis for modeling the charge build-up in a switch. Despite significant differences between the dielectrics, in terms of leakage current and trapping properties, the numerical model of charge build-up fits well with experimental data. We conclude that the switch lifetime can be correlated with the trapping properties of the dielectric itself. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1609 / 1614

页数：6

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