Diode-pumped passively Q-switched and mode-locked Nd:GGG laser at 1.3 μm with V3+:YAG saturable absorber

被引：28
|
作者：
Zuo, C. H. [1 ,2 ]
Zhang, B. T. [2 ]
Liu, Y. B. [1 ]
He, J. L. [2 ]
Huang, H. T. [2 ]
Yang, J. F. [2 ]
Xu, J. L. [2 ]
机构：
[1] Shandong Inst Light Ind, Inst Math & Phys, Jinan 250353, Peoples R China
[2] Shandong Univ, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
来源：
LASER PHYSICS | 2010年 / 20卷 / 08期
基金：
中国国家自然科学基金;
关键词：
ND-GGG; CONTINUOUS-WAVE; GARNET CRYSTAL; NDGDVO4; LASER; V-YAG; PERFORMANCE;
D O I：
10.1134/S1054660X1015020X
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Using V3+:YAG crystal as the saturable absorber, a diode-pumped passively Q-switched and mode-locked Nd:GGG laser operating at 1.3 mu m is realized for the first time. The mode-locking modulation depth of nearly 100% has been achieved. The maximum output power and the single Q-switched pulse energy are 410 mW and 8.3 mu J. The mode-locked pulse inside the Q-switched pulse has a repetition rate of 349 MHz, and its average pulse width is estimated to be about 750 ps.
引用
收藏
页码：1717 / 1720
页数：4
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